| PART |
Description |
Maker |
| VSC7226 |
Quad 3.125Gb/s Backplane Transceiver
|
Vitesse Semiconductor Corporation
|
| VSC7961 VSC7961W VSC7961YD |
3.125Gb/s PECL Limiting Amplifier with LOS Detect
|
VITESSE[Vitesse Semiconductor Corporation]
ETC
|
| EC2720TS-110.000M |
OSCILLATORS 20PPM 0 70 2.5V 4 110.000MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 110 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| AD9883A/PCB AD9883ABSTZ-110 AD9883ABSTZ-140 AD9883 |
110 MSPS/140 MSPS Analog Interface for Flat Panel Displays
Highly Integrated Graphics Interface Chip Includes Three 8-Bit/110 MSPS ADCs
|
Analog Devices
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| TDA3654 TDA3654Q |
Vertical deflection and guard circuit 110
Philips
Vertical deflection and guard circuit 110∑
Vertical deflection and guard circuit 110°
|
19
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| HUF75829D3S HUF75829D3 HUF75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| AMT8302T56F AMT8302 AMT8302T56L |
2125 Gb/s integrated 850 nm MSM-TIA
2.125Gb/s Integrated 850nm MSM-TIA
2.125 Gb/s Integrated 850nm MSM-TIA
|
ANADIGICS, Inc.
ANADIGICS Inc
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| ABASHED 0190170001 AA-2131 |
InsulKrimp Quick Disconnect, Female, for 18-22 (0.80-0.35) Wire, Box, Tab 2.79mm(.110
InsulKrimp垄芒 Quick Disconnect, Female, for 18-22 (0.80-0.35) Wire, Box, Tab 2.79mm(.110
|
Molex Electronics Ltd.
|
| PH1214-110M |
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫，150毫秒脉冲10％的
|
Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| K2A110FFC3TAH K2A110FFD3TAH K2A095FFD3TAH K2A110EF |
110 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
110 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
95 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
110 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
|
HYPERTRONICS CORP
|
